GlobalFoundries launches FDX Fusion 7nm-class FD-SOI process

The new node gives GlobalFoundries a fresh low-power roadmap after 12FDX never reached commercial products.

GlobalFoundries has introduced FDX Fusion, a new 7nm-class FD-SOI process that swaps the company’s earlier FinFET path for planar transistors and is aimed at low-power chips for automotive, edge AI, industrial, robotics, and sensor uses. GF says the node is meant to deliver over twice the transistor density of 22FDX, along with RF, analog, mixed-signal, embedded nonvolatile memory, and in-memory computing features on one chip. The company plans to bring up demo silicon for customers in early 2027, release the first PDK in mid-2027, and start production at Dresden in 2028. GlobalFoundries says BMW, Bosch, Infineon, NXP, Siemens, and Tesla have shown interest, while Infineon has specifically confirmed collaboration on future 7nm-class radar and wireless work. The move matters because it gives GF a new FD-SOI roadmap after 12FDX never reached commercial products and could offer a more integrated alternative to FinFET-based designs for edge devices.